High-Linearity CMOS WiFi RF Power Amplifiers in Wide Range of Burst Signals

ABSTRACT

An RF power amplifier biasing circuit has a start ramp signal input, a main current source input, an auxiliary current source input, and a circuit output. A ramp-up capacitor is connected to the auxiliary current source input. A ramp-up switch transistor is connected to the start ramp signal input and is selectively thereby to connect the auxiliary current source input to the ramp-up capacitor. A buffer stage has an input connected to the ramp-up capacitor and an output connected to the main current source input at a sum node. A mirror transistor has a gate terminal corresponding to the circuit output and a source terminal connected to the sum node and to the gate terminal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application relates to and claims the benefit of U.S. ProvisionalApplication No. 62/048,737, filed Sep. 10, 2014 and entitled“HIGH-LINEARITY CMOS WIFI RF POWER AMPLIFIERS IN WIDE RANGE OF BURSTSIGNALS” the entirety of the disclosure of which is wholly incorporatedby reference herein.

STATEMENT RE: FEDERALLY SPONSORED RESEARCH/DEVELOPMENT

Not Applicable

BACKGROUND

1. Technical Field

The present disclosure relates generally to radio frequency (RF)integrated circuits, and more particularly, to complementary metal oxidesemiconductor (CMOS) RF power amplifiers with high linearity across awide range of burst signals in WiFi applications.

2. Related Art

Wireless communications systems are utilized in a variety contextsinvolving information transfer over long and short distances alike, anda wide range of modalities for addressing the particular needs of eachbeing known in the art. As a general matter, wireless communicationsinvolve an RF carrier signal that is variously modulated to representinformation/data, and the encoding, modulation, transmission, reception,de-modulation, and decoding of the signal conform to a set of standardsfor coordination of the same.

In the local area data networking context, WLAN or Wireless LAN, alsocommonly referred to as WiFi as well as 802.11 (referring to thegoverning IEEE standard), is the most widely deployed. The later, moreadvanced WiFi standards such as 802.11ac, and the previous 802.11n and802.11a standards on which it was based specify an orthogonal frequencydivision multiplexing system where equally spaced subcarriers atdifferent frequencies are used to transmit data. Several computersystems or network nodes within a local area can connect to an accesspoint, which in turn may provide a link to other networks and thegreater global Internet network. Computing devices of all form factors,from mobile phones, tablets, and personal computers now have WiFiconnectivity, and WiFi networks may be found everywhere.

As is fundamental to any wireless communications systems, a WiFi networkinterface device includes a transceiver, that is, a combined transmitterand receiver circuitry. The transceiver, with its digital basebandsystem, encodes the digital data to an analog baseband signal, andmodulates the baseband signal with an RF carrier signal. Upon receipt,the transceiver down-converts the RF signal, demodulates the basebandsignal, and decodes the digital data represented by the baseband signal.An antenna connected to the transceiver converts the electrical signalto electromagnetic waves, and vice versa. In most cases, the transceivercircuitry itself does not generate sufficient power or have sufficientsensitivity necessary for communications. Thus, additional circuits arereferred to as a front end is utilized between the transceiver and theantenna. The front end includes a power amplifier for boostingtransmission power, and/or a low noise amplifier to increase receptionsensitivity.

RF power amplifiers utilized in WiFi systems ideally have linearperformance, which is described in terms of the error vector magnitude(EVM) of the transmitted signal. In order to conserve energy, the poweramplifier is turned on and off in accordance with the transmit signalburst applied to its input. However, such switching generates transientcurrent, voltage, power gain, phase, and so on. In particular, the edgesof ramping signals results in a deterioration of EVM, also referred toas dynamic EVM, which is understood to differ from static EVM, where thecontrol signal applied to the power amplifier is in a continuously onstate. In addition to the transient signals attributable to thedynamically switching currents and voltages, thermal properties of thetransistors in the power amplifier circuitry also contribute totransient signals.

In the publication “Static and Dynamic Error Vector Magnitude Behaviorof 2.4-GHz Power Amplifier”, Sang-Woong Yoon, IEEE Transactions onMicrowave Theory and Techniques, Vol. 55, No. 4, April 2007, a thermaleffects influence on dynamic EVM was presented, and compared to staticEVM. The explanation was limited, however, to the output power levelchange during burst, which is understood to be equivalent to gainchange. Conventional communications systems can readily demodulatesignals with the small power level variations described. While the rootcause of thermal heating affecting dynamic EVM was explored, only apartial explanation was proposed. Subsequently, in the publication“Self-heating and Memory Effects in RF Power Amplifiers ExplainedThrough Electro-Thermal Modeling”, Wei Wei, et al., in NORCHIP 2013,November 2013, it was discovered that there are both amplitude-amplitude(AM-AM) and amplitude-phase (AM-PM) distortions that may be found in themodulated signal as a result of thermal effects. These distortions werefound to influence the level and phase of the inter-modulation products.According to the described simulation, even below a 50 kHz two-tonespacing, there was no difference in left- and right-side products ofintermodulation distortion. In actual implementation, envelopevariations may be at a rate of several megahertz or tens of megahertz.Such fast variation of frequency is not understood to cause a fast andlarge variation of power amplifier transistor temperatures within thesemiconductor die. In WiFi systems utilizing conventional galliumarsenide (GaAs) or silicon technologies, the thermal time constant forpower amplifier transistor stages can range from several microseconds toseveral tens of microseconds.

A technique for compensating for power amplifier transients at thebeginning of the transmission burst is disclosed in U.S. Pat. No.8,260,224 to Doherty et al. This technique is understood to require apulsed “pre-heating” by a high current for over hundreds of microsecondsbefore the RF signal burst with consecutive current shaping. Such“pre-heating” is understood to be impractical for WiFi signals, asincoming RF signal bursts are dependent on multiple factors according tothe network protocol. Problematically, the delay of the RF transmitsignal is understood to result in a substantial reduction in datathroughput. Furthermore, an additional control input/timing is needed,and though this is typically lacking in existing WiFi platformsolutions.

U.S. Pat. App. Pub. No. 2013/0307625 to Hershberger et al. disclosed abias boost circuit that is applied to the base of the RF transistor inthe WiFi power amplifier. A constant bias is applied during the RFsignal burst, in addition to an exponentially decaying boost currentthat is applied at the beginning of the burst to compensate for RFtransients. Although this technique may be suitable for power amplifiersimplemented with bipolar transistors, in CMOS-based power amplifiers, ahigh level of transients may be generated, and degrade dynamic EVMfurther.

U.S. Pat. App. Pub. No. 2013/0127540 to Kim et al. disclosed a poweramplifier with phase compensation circuitry. Specifically, phasecompensation over the RF signal power level with a pre-distortion forlinear power amplifiers is disclosed, but is not understood to be usefulfor minimizing dynamic EVM variations at signal burst edges.

A transient compensation circuit particular to WiFi power amplifiers isdisclosed in U.S. Pat. No. 7,532,066 to Struble, et al. A currentsteering circuit is used to add current at the beginning of an RF signalburst along the same lines as Hershberger. However, dynamic degradationis not considered, and the solution appears limited to power leveldependence.

In a publication entitled “Front-end Modules with Versatile Dynamic EVMCorrection for 802.11 Applications in the 2 GHz Band”, Samelis, et al.,2014 IEEE Topical Conference on Power Amplifiers for Wireless and RadioApplications (PAWR), January 2014, test results of a dynamic EVMcompensation circuit implemented with silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) power amplifiers for a WiFifront end circuit are disclosed. Thermal dependence was indicated as theroot cause of dynamic EVM for different burst conditions, but onlyfairly short burst windows of approximately 176 microseconds wereconsidered, which are typical for mobile applications. In the proposedcircuit, digital settings would be needed during preliminary calibrationat different power levels. Furthermore, the proposed circuit isunderstood to be unsuitable for increased bias voltages that are typicalof more recent modulation schemes such as those specified in the802.11ac standard.

Along these lines, recent WiFi systems implementing 802.11n and/or802.11ac may employ a wider burst of up to several milliseconds totransmit a larger amount of data as would be typical in access point orrouter operation. The more substantial thermal issues along with highertransmit power levels complicate dynamic EVM compensation circuits.While suitable for such high power applications, GaAs semiconductormaterial has approximately three times the thermal resistance of siliconmaterial, so circuits fabricated therewith are understood to be moreprone to transients and dynamic EVM deterioration at different burstconditions.

Accordingly, there is a need in the art to address the problem ofdynamic EVM over the entire burst duration. That is, there is a need inthe art for RF power amplifiers with high linearity across a wide rangeof burst signals in WiFi applications.

BRIEF SUMMARY

The present disclosure is directed to solving dynamic EVM issues in WiFiRF power amplifiers by adjusting gain and phase properties over theduration of an entire signal transmission burst. Generally, the gain andphase properties may be compensated via appropriate adjustment of thebiasing voltage to the power amplifier over the burst duration.Furthermore, various embodiments contemplate the adjustment of biasingvoltages over a wide range of ambient temperatures to further minimizedynamic EVM.

According to one embodiment of the present disclosure, there is a radiofrequency (RF) power amplifier circuit that is comprised of a poweramplifier and a control circuit. The power amplifier may include a poweramplifier output and an RF signal input. The control circuit mayselectively bias the power amplifier, and may include an auxiliarycurrent source and a ramp-up capacitor connected to the auxiliarycurrent source. Furthermore, the control circuit may include a ramp-upswitch that is connected to the auxiliary current source. The ramp upswitch may selectively activate the auxiliary current source and chargethe ramp-up capacitor in response to a control signal corresponding toan RF signal burst. The control circuit may also include a buffer withan output and an input connected to the ramp-up capacitor. Voltage atthe input of the buffer may be linearly dependent over an RF signalburst duration. There may also be a main current source that can beconnected to the output of the buffer at a sum node. The sum node, inturn, may be connected to the power amplifier.

Another embodiment of the present disclosure is directed to an RF poweramplifier biasing circuit with a start ramp signal input, a main currentsource input, an auxiliary current source input, and a circuit output.There may be a ramp-up capacitor connected to the auxiliary currentsource input. The biasing circuit may also include a ramp-up switchtransistor that is connected to the start ramp signal input. The ramp-upswitch transistor may be selectively activated by the start ramp signalinput to connect the auxiliary current source input to the ramp-upcapacitor. There may also be a buffer stage with an input connected tothe ramp-up capacitor and an output connected to the main current sourceinput at a sum node. Furthermore, the biasing circuit may include amirror transistor with a gate terminal corresponding to the circuitoutput and a source terminal connected to the sum node and to the gateterminal.

In one variation, there may be a ramp-down switch transistor that isactivated at the end of the RF signal transmission burst to dischargethe ramp-up capacitor. In another variation, there may be an inverterstage with an input connected to the ramp-up capacitor and an outputconnected to the buffer stage, with the ramp-up switch being driven by apulse that is shorter in duration that the RF signal transmission burst.

Yet another embodiment of the present disclosure is an RF poweramplifier biasing circuit with a biasing output and is connectible to aband gap reference circuit with a first current output generating afirst voltage level and a second current output generating a secondvoltage level. The circuit may include a switch having a first throwterminal, a second throw terminal, and a pole terminal. The first throwterminal may be connected to the first current output of the band gapreference circuit, and the second throw terminal may be connected to thesecond current output of the band gap reference circuit. The switch mayselectively connect the first throw terminal and the second throwterminal to the pole terminal in response to a switch enable input.There may also be an operational amplifier with a first differentialinput, a second differential input, and an operational amplifier output.The operational amplifier may also be powered by the band gap referencecircuit. The biasing circuit may also include a rampingresistor-capacitor network connected to the first differential input ofthe operational amplifier. A ramping resistor of the rampingresistor-capacitor network may be connected to the pole terminal of theswitch. The biasing circuit may have an output transistor that isconnected to the output of the operational amplifier. Further, it maydefine an output that corresponds to the biasing output. A feedbackresistor network may be connected to the output transistor and to thesecond differential input of the operational amplifier. A voltage on thebiasing output may ramp from the first voltage level to the secondvoltage level in conjunction with the switch being selectively activatedfrom connecting the first throw terminal and the pole terminal, toconnecting the second throw terminal and the pole terminal.

The various embodiments of the present disclosure will be bestunderstood by reference to the following detailed description when readin conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features and advantages of the various embodimentsdisclosed herein will be better understood with respect to the followingdescription and drawings, in which like numbers refer to like partsthroughout, and in which:

FIG. 1 is a diagram illustrating a Physical Layer Convergence Protocol(PLCP) data unit for the IEEE 802.11 wireless LAN standard;

FIG. 2 is a diagram illustrating an Orthogonal Frequency DivisionMultiplexing (OFDM) training sequence structure/PLCP preamble;

FIG. 3 is a diagram illustrating frequency offset estimation overmultiple symbols and resulting phase errors that contribute to totalerror vector magnitude (EVM) over a packet burst;

FIG. 4 is a schematic diagram of a first embodiment of an RF poweramplifier bias control circuit;

FIG. 5 is a simplified schematic diagram of the bias control circuitshown in FIG. 4;

FIG. 6 is a schematic diagram of a second embodiment of the RF poweramplifier bias control circuit;

FIG. 7 is a schematic diagram of a third embodiment of the RF poweramplifier bias control circuit;

FIGS. 8A-8C are ideal timing diagrams of the enable line used in thethird embodiment of the RF power amplifier bias control circuit shown inFIG. 7;

FIG. 9 is a graph plotting simulated transient characteristics of thethird embodiment of the RF power amplifier bias control circuit shown inFIG. 7;

FIG. 10 is a graph plotting compensation characteristics over a range ofambient temperatures in temperature-compensated reference voltagesgenerated for the bias control circuit in accordance with variousembodiments of the present disclosure.

DETAILED DESCRIPTION

The present disclosure is directed to RF power amplifier circuits thathave high linearity with minimal dynamic error vector magnitude (EVM)across a wide range of WiFi burst signal lengths. The gain and phase ofthe RF power amplifier is adjusted over the entire burst duration andover a wide range of ambient temperatures by compensating with biasingvoltages to one or more of the RF power amplifier stages.

The detailed description set forth below in connection with the appendeddrawings is intended as a description of the several presentlycontemplated embodiments of power amplifier circuits and a bias controlcircuits, and is not intended to represent the only form in which thedisclosed invention may be developed or utilized. The description setsforth the functions and features in connection with the illustratedembodiments. It is to be understood, however, that the same orequivalent functions may be accomplished by different embodiments thatare also intended to be encompassed within the scope of the presentdisclosure. It is further understood that the use of relational termssuch as first and second and the like are used solely to distinguish onefrom another entity without necessarily requiring or implying any actualsuch relationship or order between such entities.

The diagram of FIG. 1 illustrates a Physical Layer Convergence Protocol(PLCP) Data Unit (PPDU 10), which is understood to represent a basicphysical layer transmission frame as defined under the IEEE 802.11standard. As indicated above, more recent WiFi standards such as802.11ac, as well as the earlier 802.11a and 802.11n standards fromwhich 802.11ac is based utilize orthogonal frequency divisionmultiplexing, where data is transmitted in equally spaced subcarriers.The number of subcarriers largely depends on the bandwidth, and can varyfrom 64 subcarriers for a 20 MHz bandwidth, up to 512 subcarriers for a160 MHz bandwidth. Very High Throughput (VHT) devices are required toco-exist with legacy devices operating under the earlier 802.11a and802.11n standards. Accordingly, VHT devices send the same preamble ineach 20 MHz sub-band so that all 802.11 devices may synchronize with thepacket.

In further detail, the mixed format PPDU 10 includes a legacy shorttraining field (L-STF) of 2 symbols, and a legacy long training field(L-LTF) also of 2 symbols. These are used for backwards compatibilitywith previous standards, and are duplicated for each 20 MHz sub-bandwith phase rotation to mitigate the effects of Peak to Average PowerRatio (PAPR) that otherwise reduce the efficiency of the RF poweramplifiers. These training fields are followed by a legacy signal field(L-SIG) of 1 symbol, transmitted by binary phase shift keying (BPSK).

Fields specific to VHT transmissions are also part of the 802.11ac PPDU10, including a VHT-SIG-A field of 2 symbols that communicate how thereceiver is to interpret subsequent packets and specify bandwidth,number of MIMO streams, space-time block codes used, guard interval, andso forth. Additionally, there is a VHT short training field (VHT-STF) of1 symbol used to improve gain control estimation for MIMO operation, anda variable number (1, 2, 4, 6, or 8) VHT long training fields (VHT-LTF)of 1 symbol each. There is a VHT-SIG-B field that details payload data,including data length and modulation coding scheme for multi-user mode.Following these fields is a data field.

Referring now to the diagram of FIG. 2, an OFDM training sequencestructure 12 includes t₁ to t₁₀ short training symbols and T₁ and T₂long training symbols that is separated by a guard interval GI2. A firstset 12 a of training symbols is used for signal detection, automaticgain control, and diversity selection, while a second set 12 b oftraining symbols is used for coarse frequency offset estimation andtiming synchronization at a receiver node. Each of the symbols is 16samples long, or 0.8 μs. The long training symbols within a third set 12c are used for fine frequency offset estimation, and for channelcoefficients estimation. The long training symbols are followed by aSIGNAL and a DATA field, each separated by guard intervals GI.

Phase tracking is a central requirement for WiFi implementations, asOFDM consists of multiple sub-carriers with amplitude and phasemodulation such as BPSK, QPSK, and QAM in each sub-carrier. Referringnow to the diagram of FIG. 3, coarse frequency offset estimation is usedby the demodulator at the second symbol to set the PLL (phase lockedloop) frequency in a receive chain. It is understood that frequencydetectors are based on phase detection of a signal. Fine frequencyoffset estimation in the demodulator sets the precise frequency of thePLL by the end of the fourth symbol, and the reference phase is set toΔΦ=0. Each consecutive symbol is compared to ΔΦ=0, so each consecutivesymbol is understood to have a phase error ΔΦn referenced to the phaseΦ1, at which point the frequency offset is established in the PLL. Thesum of these errors is understood to create a total EVM over the packetburst, along with other amplitude errors that may be present in thetransmit chain. This technique is referred to in the art as preambletracking, and is understood to be advantageous as requiring minimalprocessor resources, and reduced current consumption of the WiFi systemover payload tracking techniques.

Various embodiments of the present disclosure are directed to minimizingdynamic EVM in preamble tracking WiFi systems. Referring to theschematic diagram of FIG. 4, a first embodiment of a bias controlcircuit 14 a is shown connected to an RF power amplifier stage asrepresented by a transistor Q1. In this regard, the bias control circuit14 a is understood to have a bias control output 16, with the gate ofthe transistor Q1 corresponding to the RF power amplifier input, towhich an RF signal input is also connected.

The RF power amplifier, e.g., the transistor Q1, is biased by a currentmirror circuit 18 that includes a mirror transistor Q2, the gate anddrain terminals of which are connected to the input of the RF poweramplifier and specifically the gate terminal of the transistor Q1. Thereis a resistor R1 interconnecting the respective gate terminals of thetransistors Q1 and Q2, and is understood to decouple the RF signal inputfrom the bias control circuit 14. Accordingly, the resistor R1 has alarge value. The mirror transistor Q2 is biased via a main currentsource 20, which is connected to a drain of the mirror transistor Q2 inseries with a resistor R2. The main current source 20 is understood togenerate a constant current during an RF signal transmission burst.

In addition to the main current source 20, various embodiments of thebias control circuit 14 are understood to incorporate an auxiliarycurrent source 22. Like the main current source 20, the auxiliarycurrent source 22 outputs a constant current when turned on. The biascontrol circuit 14 further includes a ramp-up switch 24, that is, atransistor Q3 that selectively activates the auxiliary current source22. By way of a start ramp signal 26, generally referred to as a controlsignal, the transistor Q3 is turned on and turned off. The start rampsignal 26 is understood to transition to an on or high state inconjunction with the RF signal transmission burst, and specifically tothe start of the same. With the transistor Q3 turned on, the DC currentfrom the auxiliary current source 22, through resistor R3, beginscharging a ramp-up capacitor C1.

Thus, as illustrated by FIG. 5, the output of the auxiliary currentsource 22 as controlled by the ramp-up switch 24 is connected to theramp-up capacitor C1, a ramp-down switch 28, as well as a buffer stage30. The ramp-down switch 28 corresponds to a transistor Q4, which may beselectively activated by a stop ramp signal 32. Generally, when thestart ramp signal 26 is active, the stop ramp signal is inactive, andthe transistor Q4 is off.

In further detail, the buffer stage 30 may be implemented as a sourcefollower (common drain stage) based on a transistor Q5, with a gateterminal thereof corresponding to an input, and a source terminalthereof corresponding to an output. The voltage at the input of thebuffer stage 30, e.g., the gate terminal of the transistor Q5, isunderstood to have a linear dependence over the duration of the RFsignal transmission burst, as shown in plot 34. This voltage is added tothe voltage from the main current source 20 at a sum node 36, which isconnected to the source terminal of the transistor Q5, as well as thedrain and gate terminals of the mirror transistor Q2 (sum node). Theconstant DC voltage from the main current source 20, together within theramping voltage from the auxiliary current source 22, results in a biassignal as represented in a plot 38 with duration of T_(burst). Inaccordance with various embodiments, the slope of the linearlyincreasing voltage, together with the voltage provided by the maincurrent source 20 at the sum node 36 is understood to compensate for S21(gain) and S21 phase characteristics over the entirety of the RF signaltransmission burst. Accordingly, minimization of overall dynamic EVM canbe achieved.

At the end of the RF signal transmission burst, the start ramp signal 26is deactivated or turned off, thus disconnecting the auxiliary currentsource 22. Furthermore, the stop ramp signal 32 is activated or turnedon, thereby activating the ramp-down switch 28, e.g., the transistor Q4.The remaining voltage stored in the ramp-up capacitor C1 is understoodto be discharged through the small resistance of the transistor Q4, asit provides a current path to ground.

A second embodiment of a bias control circuit 14 b is shown in theschematic diagram of FIG. 6. Again, the bias control circuit 14 isconnected to an RF power amplifier stage as represented by thetransistor Q1, and thus defining the bias control output 16. The gate ofthe transistor Q1 corresponds to the RF power amplifier input, to whichthe RF signal input is connected.

Like the first embodiment 14 a, the RF power amplifier, e.g., thetransistor Q1, is biased by the current mirror circuit 18 that includesthe mirror transistor Q2, the gate and drain terminals of which areconnected to the input of the RF power amplifier and specifically to thegate terminal of the transistor Q1. The resistor R1 interconnects therespective gate terminals of the transistors Q1 and Q2, and decouplesthe RF signal input from the bias control circuit 14. The mirrortransistor Q2 is biased via the main current source 20, which isconnected to the drain of the mirror transistor Q2 in series with aresistor R2. The main current source 20 generates a constant currentduring an RF signal transmission burst.

The second embodiment of the bias control circuit 14 b also incorporatesthe auxiliary current source 22 that outputs a constant current whenturned on. Again, the ramp-up switch 24 (transistor Q3) selectivelyactivates the auxiliary current source 22. With the start ramp signal26, generally referred to as a control signal, the transistor Q3 isturned on and turned off. In the second embodiment, the start rampsignal 26 is a pulse as shown in plot 40, and is initiated at thebeginning of the RF signal transmission burst. While the transistor Q3turned on, the DC current from the auxiliary current source 22, throughresistor R3, charges the ramp-up capacitor C1 to a specified voltagelevel. As the duration of the pulse of the start ramp signal 26 isshort, so is the charging time. It is understood to be less than asignal symbol duration, and is only several nanoseconds long.

Once the start ramp signal 26 returns to zero, the ramp-up capacitor C1is discharging through resistor R5, which is also connected to theoutput of the auxiliary current source 22 as well as the ramp-upcapacitor C1. Thus, at node 42 (to which the ramp-up capacitor C1,resistor R5, and the auxiliary current source 22 are connected) there isan exponentially decaying voltage in a time frame that is less than theminimum burst width of the RF signal transmission. According to variousembodiments, this duration is understood to be several tens ofmicroseconds. An example plot 44 shows the initial fast ramp-upcharging, followed by the gradual discharging, of the ramp-up capacitorC1.

The second embodiment of the bias control circuit 14 b incorporates aninverter stage 46, an input to which is connected to the node 42, e.g.,the ramp-up capacitor C1, the output of the auxiliary current source 22,and the resistor R5. The inverter stage 46 inverts the voltage signal atits input as shown in a plot 48, where there is an immediate drop involtage followed by an increase for an extended duration. This voltageis input to the buffer stage 30, where it is combined with the constantvoltage signal output by the main current source 20 at the sum node 36.A plot 50 illustrates the exemplary bias control voltage signal that isin accordance with this combination.

It is expressly contemplated that the slope of the exponentiallyincreasing voltage may be adjusted by changing the ramp-up capacitor C5and/or the resistor R5 values. Furthermore, the initial voltage level towhich the ramp-up capacitor C5 is charged, as well as the voltageprovided by the main current source 20 at the sum node 36 results incompensating for gain and phase characteristics over the entirety of theRF signal transmission burst. As such, overall dynamic EVM can beminimized. The ramp-up time is selected so that dynamic EVM is notdegraded by a short spike in the DC voltage at the beginning of the RFsignal transmission burst. Although in the contemplated embodiment theEVM of the first few transmitted symbols are distorted, because thephase of consecutive symbols are compared to the compensated phaseduring the fine frequency offset estimation, overall EVM during the RFsignal transmission burst is understood to be minimized.

Referring now to the schematic diagram of FIG. 7, there is a furtherthird embodiment of the bias control circuit 14 c, an output 52 of whichcan similarly be connected to various RF power amplifiers as biascurrent sources. The bias control circuit 14 c may be connected to aband gap reference circuit 54 that provides a stable current at threeoutput nodes. The first current output i1 is connected to a resistor R1tied to ground, and the second current output i2 is connected to aresistor R2 also tied to ground. Accordingly, resistors R1 and R2,together with the first and second current outputs i1 and i2,respectively, define V1 and V2 as reference voltages.

The bias control circuit 14 c also includes a switch 55 with a firstthrow terminal 56 a that is tied to the reference voltage V1, and asecond throw terminal 56 b that is tied to the reference voltage V2. Theswitch 55 further includes a pole terminal 58 that is selectivelyconnected to one of the first and second throw terminals 56 a, 56 bdepending on the enable line input 60 a and/or the inverse enable lineinput 60 b. The pole terminal 58 is connected to a ramping R-C network62 defined by a resistor R and a capacitor C. According to variousembodiments, the ramping R-C network 62 sets the time constant forramping from the reference voltages V1 to V2 in order to compensate fordynamic EVM impairments in RF transmission bursts of varying durations.

There is an operational amplifier 64 with a first differential input 66a, a second differential input 66 b, and an operational amplifier output68. The band gap reference circuit 54 also provides a stable current tothe operational amplifier 64.

The ramping R-C network 62 is connected to the first differential input66 a, while the operational amplifier output 68 is fed back to thesecond differential input 66 b. Specifically, the operational amplifieroutput 68 is connected to the gate of an output transistor 70, which ispreferably, though optionally a PMOS type. The drain terminal of theoutput transistor 70 is connected to a feedback network 72 comprised ofa resistive divider formed by resistor R3 and R4. The junction betweenthe resistor R3 and R4 is connected to the second differential input 66b. Furthermore, the drain terminal of the output transistor 70 isunderstood to correspond to the output 52. The voltage level at theoutput 52 is set by the feedback network 72, the output transistor 70,and the operational amplifier 64.

As indicated above, the output 52 is connected to an RF power amplifiertransistor stage, and with further particularity, the drain terminal ofsuch a transistor. In a multi-stage power amplifier, the output 52 ofthe bias control circuit 14 c may be connected to the first stage thatconsume the lowest amount of current, but it is also contemplated thatthe output 52 may be connected to any other stage, and not limited tothe final stage.

Referring to the graphs of FIGS. 8A-8C, various timing diagrams showingthe enable line input 60, the resulting reference voltage V_(ref) duringthe same duration, and the output voltage from the output 52 will beconsidered. In particular, FIG. 8A plots the enable line input 60 goingto “high” at a time T1, and remaining high for the duration of the RFtransmission burst. FIG. 8B shows the reference voltage input to theoperational amplifier 64 initially starting at voltage level V1 untiltime T1 when the enable line input 60 transitions to “high,” with thereference voltage input transitioning to the voltage level V2 from timeT1 to time T1 plus the RC time constant. Once the enable line input 60is transitioned back to zero, the reference voltage input transitions tovoltage level V1. Finally, the plot of FIG. 8C shows the output voltageat the output 52, which is defined as V1(R3+R4)/R4 or V2(R3+R4)/R4.Thus, when the enable line input 60 is low, the output voltage is afunction of reference voltage V1 and the feedback network 72, whereaswhen the enable line input 60 is high, the output voltage is a functionof reference voltage V2 and the feedback network 72.

Although the various components, including the resistor R and thecapacitor C of the ramping R-C network 62, and the resistors R3 and R4of the feedback network 72, are depicted as single components, it willbe appreciated by those having ordinary skill in the art that multipleones can be combined to define such components. Furthermore, havingconsidered the configuration and arrangement of the bias controlcircuits 14, the specific values of the components to achieve thecontemplated dynamic EVM minimization objectives will be within thepurview of one having ordinary skill in the art.

The graph of FIG. 9 plots the simulated transient responses of the biascontrol circuit 14 c over time. A first region 74 is of the outputinitial voltage level, while a second region 76 is of the output finalvoltage level for different component values.

In accordance with various embodiments of the present disclosure, thereference voltages V1 and V2 can be adjusted for different ambient andtransistor junction temperatures, as the phase and amplitudecharacteristics of the RF power amplifier may depend thereon. The graphof FIG. 10 shows the compensation characteristics over an ambienttemperature range, with a first set of plots 78 showing the outputinitial voltage levels with positive, negative, and constant temperatureprofiles, and a second set of plots 80 showing the output final voltagelevels with positive, negative, and constant temperature profiles. Inthis regard, the bias control circuit 14 may include ambient temperaturevoltage adjustment circuits that are connectible to the band gapreference circuit 54.

It is contemplated that the bias control circuits 14 of the presentdisclosure may be utilized in other digitally modulated wirelesscommunications modalities, as well as for different semiconductortechnologies to compensate for dynamic EVM that are a consequence ofdynamic switching of RF transistor stages.

The particulars shown herein are by way of example and for purposes ofillustrative discussion of the embodiments of the power amplifier onlyand are presented in the cause of providing what is believed to be themost useful and readily understood description of the principles andconceptual aspects. In this regard, no attempt is made to show detailswith more particularity than is necessary, the description taken withthe drawings making apparent to those skilled in the art how the severalforms of the present disclosure may be embodied in practice.

1-26. (canceled)
 27. A radio frequency power amplifier circuitcomprising: a power amplifier with an output and a radio frequencysignal input; and a bias control circuit connected to the poweramplifier, the bias control circuit being connectible to a main currentsource generating a constant current during an input signal burst tobias the power amplifier, and to an auxiliary current source generatinga constant current, the auxiliary current source being selectivelysummed with the main current source in a linearly dependent relationshipto the input signal burst.
 28. The radio frequency power amplifiercircuit wherein the bias control circuit includes a ramp-up capacitorand a ramp-up switch connectible to the auxiliary current source, theramp-up capacitor being charged in the linearly dependent relationshipto the input signal burst and in response to a ramp start signal inputcorresponding to the input signal burst.
 29. The radio frequency poweramplifier circuit of claim 28 wherein the bias control circuit includesa buffer with an input connected to the ramp-up capacitor.
 30. The radiofrequency power amplifier circuit of claim 29 wherein the bias controlcircuit includes a mirror circuit connected to the power amplifier andto the buffer.
 31. The radio frequency power amplifier circuit of claim30 wherein the mirror circuit is biased with the main current source.32. The radio frequency power amplifier circuit of claim 28 wherein theramp-up switch is a transistor with a gate receptive to the ramp startsignal input and a drain connectible to the auxiliary current source.33. The radio frequency power amplifier circuit of claim 28 wherein thebias control circuit includes a ramp-down switch connected to theramp-up capacitor, the ramp-down switch being selectively activated atan end of the input signal burst to discharge the ramp-up capacitor. 34.The radio frequency power amplifier circuit of claim 33 wherein theramp-down switch is deactivated at the end of the input signal burst.35. The radio frequency power amplifier circuit of claim 33 wherein thebias control circuit includes a capacitor discharge resistor connectedto the ramp-up capacitor.
 36. The radio frequency power amplifiercircuit of claim 35 wherein the bias control circuit includes aninverter, the inverter including an inverter input connected to theramp-up capacitor and an inverter output connected to the buffer,voltage at the input of the inverter exponentially decaying in aduration less than a minimum input signal burst duration.
 37. The radiofrequency power amplifier circuit of claim 36 wherein values of theramp-up capacitor and the capacitor discharge resistor correspond to aspecific exponential decay of the voltage at the input of the inverter.38. A radio frequency power amplifier biasing circuit connectible to astart ramp signal, a main current source, and an auxiliary currentsource, the circuit comprising: an auxiliary current circuit with aramp-up capacitor connected to the auxiliary current source, and aramp-up switch controlled by the start ramp signal, the ramp-up switchselectively activating the auxiliary current source to energize theramp-up capacitor; and a mirror circuit connected to the main currentsource and the auxiliary current circuit, the mirror circuit includingan output corresponding to a biasing circuit output.
 39. The radiofrequency power amplifier biasing circuit of claim 38 further comprisinga ramp-down switch connected to the ramp-up capacitor, the ramp-downswitch being selectively activated at an end of the input signal burstto discharge the ramp-up capacitor.
 40. The radio frequency poweramplifier biasing circuit of claim 39 wherein the ramp-down switch isdeactivated at the end of the input signal burst.
 41. The radiofrequency power amplifier biasing circuit of claim 38 further comprisinga buffer with an input connected to the ramp-up capacitor and an outputconnected to the mirror circuit.
 42. The radio frequency power amplifierbiasing circuit of claim 41 further comprising an inverter with aninverter input connected to the ramp-up capacitor and an inverter outputconnected to the buffer, voltage at the input of the inverterexponentially decaying in a duration less than a minimum input signalburst duration.
 43. The radio frequency power amplifier biasing circuitof claim 42 wherein values of the ramp-up capacitor and the capacitordischarge resistor correspond to a specific exponential decay of thevoltage at the input of the inverter.
 44. A method for minimizingdynamic error vector magnitude in preamble tracking wireless datacommunication systems, the method comprising: activating, with a maincurrent source, a mirror circuit connected to a power amplifier;activating a ramp-up switch in response to receiving a ramp-up controlsignal, the activated ramp-up switch responsively activating anauxiliary current source connected to a ramp-up capacitor, the ramp-upcontrol signal being timed in conjunction with an input signal burstapplied to the power amplifier; charging the ramp-up capacitor with theauxiliary current source; applying an auxiliary ramp voltage at theramp-up capacitor to a buffer, the auxiliary ramp voltage having alinear dependence over a duration of the input signal burst; and summingan output voltage from the buffer with a voltage from the mirrorcircuit, the summed voltage biasing the power amplifier.
 45. The methodof claim 44 further comprising activating a ramp-down switch in responseto receiving a ramp-down control signal, the activated ramp-down switchresponsively discharging the auxiliary ramp voltage of the ramp-upcapacitor.
 46. The method of claim 44 further comprising applying theauxiliary ramp voltage to an inverter prior the buffer, voltage at aninput of the inverter exponentially decaying in a duration less than aminimum input signal burst duration.